ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,364, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "High electron mobility transistor and method ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,365, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure an... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,366, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabricati... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,367, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Vertical transistors having improved control o... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,368, issued on May 12, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and method of manufacturing semiconductor de... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,369, issued on May 12, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China). "Nitride-based semiconductor device wi... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,370, issued on May 12, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan). "Semiconductor device with multilayer source and dr... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,371, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of manufacturi... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,372, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Capacitance reduction for backside po... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,373, issued on May 12, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having a field termination struc... Read More